InGaAs / SWIR 1/4 VGA Cooled High Resolution Camera

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  • 320 x 256 resolution with 30 micron pixel size
  • Fast Frame Rate
  • Region of Interest
  • 900nm 1700nm

ASP distributes PSL InGaAs short wave infrared (SWIR) 1/4 cameras , delivering 320x256 resolution. The high resolution SWIR camera can be used for a very wide variety of applications including laser beam profiling, semiconductor inspection, hyperspectral imaging, on-line process control, Low-light level imaging, and screening solar cells.

Example: For solar cells screening, defects at early processing stage can be imaged through the bulk silicon thanks to its transparency at wavelengths beyond 1.1 micron. Cracks, dead or weak responding areas are unveiled on sliced wafers, enabling automatic sorting / selection of the best pieces. The camera finally captures faint electroluminescence (EL) and photoluminescence (PL) emissions from individual photovoltaic cells that are directly proportional to their efficiency. These high resolution SWIR cameras are supplied with state of art SWIR optics which will deliver superior resolution / contrast modulation and lower distortion than conventional NIR optics that are used with conventional CCD cameras.

List of Abstract and published papers;

SWIR imagers can operate at near room temperature with cut-off wavelengths that extend from 1.7μm (for InP lattice matched InGaAs) to beyond 2.0μm with strained InGaAs epitaxial growth on InP substrates. A leading application in the SWIR band – Night vision, requires very low dark current levels, whereas the dark current increases as the cutoff wavelength increases. We demonstrate imaging applications are made possible by utilizing dark current reduction and the physics knowledge of background and objects radiances. A newly built imager is presented. 


  • Spectral Domain OCT imaging
  • Solar cell inspection, science imaging
  • Bare solar cell silicon wafer inspection
  • Astronomy
  • Semiconductor inspection
  • TIRF / Super resolution microscopy
  • Temperature furnace monitoring
  • Confocal microscopy / cell screening
  • Industrial thermal imaging
  • Chemiluminescence
  • Imaging spectroscopy
  • DeSrmpatoelogcic timragoingscopy
  • Thick sample / tissue IR microscopy
  • Single molecule imaging
  • Laser profiling / telecom
  • Cell motility / live cell recording
  • Low ligh Level / range gated IR imaging
  • Hyper-spectral imaging
  • Electron microscopy
  • Biochip reader
  • Spectroscopy

CharacteristicsPSEL qVGA 30um
Spectral Range900 - 1700 nm
Frame Rate110 fps at full qVGA resolution
Sensor Size9.6 mm x 7.68 mm
Resolution in Pixels320 x 256
Pitch30µm x 30µm
Full well capacity100k- 140k electrons (high gain mode) 0.9M - 1.3M electrons (low gain mode)
Read-out noise90-150 electrons (high gain mode)   700-1100 electrons (low gain mode)
Reading modeIntegrate Then Read, Integrate While Read
Dark Current<2.5fA with air cooling & <0.5fA with water cooling
Sensor Operating Temperature-25°C with air cooling, -40°C with water cooling (lower dark current)
CorrectionsNon uniformity, bright pixel, gain, offset, flatfield
ADC14-bit with 16-bit digital processing
Exposure control1 microsecond up to > 1 second
QE@ 1500 nm80%

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